Vishay SI4900DY-T1-GE3
$ 0.653
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TTI Asia | SI4900DY-T1-GE3 | Contacto | 4h | |||||||||
| TTI Europe | SI4900DY-T1-GE3 | 0 | 2500 | Tape & Reel | 4h | |||||||
| Farnell | SI4900DY-T1-GE3 | 0 | 1 | Cut Tape | 1d | |||||||
| Mouser | 781-SI4900DY-GE3 | 1125 | 1 | Tape & Reel | ||||||||
| Component Stockers USA | SI4900DY-T1-GE3 | 14.385 | >1wk |
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Cadena de suministros
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-03-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-11-03
LTD Date2025-05-03
Descripciones
Descripciones de Vishay SI4900DY-T1-GE3 suministradas por sus distribuidores.
Transistor MOSFET Array Dual N-CH 60V 5.3A 8-Pin SOIC T/R
Avnet Japan
MOSFET 2N-CH 60V 5.3A 8-SOIC / Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC
Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
COMPLEMENTARY MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:5.3A; On Resistance, Rds(on):0.072ohm; Rds(on) Test Voltage, Vgs:4.5V ;RoHS Compliant: Yes
Alias de fabricantes
Vishay tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Vishay también podría ser conocido por los siguientes nombres:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOIC N
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)5.3 A
Drain to Source Resistance58 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationDual
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance665 pF
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation2 W
Rds On Max58 mΩ
Rise Time65 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time15 ns
Turn-On Delay Time15 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento