Taiwan Semiconductor BC846B
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: -100%
Modelos CAD
0 modelos disponibles
Componentes alternativos
0 piezas disponibles
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descripciones
Descripciones de Taiwan Semiconductor BC846B suministradas por sus distribuidores.
SOT-23 80V 0.1A NPN Bipolar Transistor
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
500mV@ 5mA,100mA NPN 200mW 6V 100nA 80V 65V 100mA SOT-23 3.04mm*1.4mm*1.12mm
Taiwan Semiconductor BC846B RF 晶体管
RS APAC
Alias de fabricantes
Taiwan Semiconductor tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Taiwan Semiconductor también podría ser conocido por los siguientes nombres:
- TAIWAN SEMI
- TSC
- TAIWAN
- Taiwan Semiconductor Corporation
- TAIWAN SEMICONDUCTOR CO LTD
- TAIWAN SEM
- TAIWAN SEMICONDUCTOR MANF
- TAIWAN SEMICOND
- TAIW
- Taiwan Semiconductor Company
- Taiwan Semiconductor(Taiwan Semicon)
- SEMICONDUCTO
- Taiwan Semiconductors
- Taiwan Semiconduct
- TSC (Taiwan Semiconductor)
- Taiwan Semiconductor Co
- Taiwan Semiconductor(TSC)
- TWAN
- SEMICONDCTOR
- Won-Top Electronics
- TAIWAN SEMICONDUSTOR
- Taiwan Semiconductor Manufacturing Company Limited
- Taiwan Semiconductor Europe GmbH
- TAWIN SEMI
- TAIWAN OHM
Historial de existencias
Tendencia de 3 meses: -100%
Modelos CAD
0 modelos disponibles
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Breakdown Voltage51 V
Clamping Voltage70.1 V
Collector Base Voltage (VCBO)80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)65 V
Continuous Collector Current100 mA
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Forward Voltage1 V
Gain Bandwidth Product100 MHz
Gate to Source Voltage (Vgs)-1.5 V
hFE Min200
Input Capacitance436 pF
Max Collector Current100 mA
Max Forward Surge Current (Ifsm)2.5 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Max Repetitive Reverse Voltage (Vrrm)250 V
Max Reverse Leakage Current1 µA
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements1
Peak Pulse Current21.4 A
Peak Pulse Power 1.5 kW
PolarityNPN
Power Dissipation200 mW
Reverse Recovery Time50 ns
Reverse Standoff Voltage24 V
Test Current2.5 mA
Transition Frequency100 MHz
Zener Voltage75 V
Dimensions
Height1.2 mm
Length3 mm
Width1.4 mm