STMicroelectronics STD11NM60N
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STD11NM60N | 0 | 1 | 1d | ||||||||
| Microchip USA | STD11NM60N | 351 | 600 | Tray | 2d | |||||||
| Component Stockers USA | STD11NM60N | 14.477 | >1wk | |||||||||
| Win Source | WS-STD11NM60N | 9000 | 22 | 36m | ||||||||
| Worldway Electronics | STD11NM60N | 8643 | 7 | Tape & Reel | 23h |
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-08-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Descripciones
Descripciones de STMicroelectronics STD11NM60N suministradas por sus distribuidores.
N-channel 600 V, 0.37 Ohm, 10 A MDmesh(TM) II Power MOSFET in a DPAK package
Power Mosfet, N Channel, 10 A, 650 V, 450 Mohm, 10 V, 3 V
Power Field-Effect Transistor, 10A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd
Alias de fabricantes
STMicroelectronics tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. STMicroelectronics también podría ser conocido por los siguientes nombres:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Especificaciones técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance850 pF
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation90 W
Rds On Max450 mΩ
Rise Time18.5 ns
Turn-Off Delay Time50 ns
Voltage Rating (DC)600 V
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant