STMicroelectronics STB180N55F3
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STB180N55F3 | 0 | 1K | 3h | ||||||||
| Farnell | STB180N55F3 | 0 | 1 | 1d | ||||||||
| Win Source | WS-STB180N55F3 | 20 | 17 | 2h | ||||||||
| Worldway Electronics | STB180N55F3 | 16.582 | 7 | Tape & Reel | 1h | |||||||
| Utmel Electronic | 2381-STB180N55F3 | 9000 | 11h |
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para STMicroelectronics STB180N55F3.
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-04-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-01-29
LTD Date2014-07-29
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Descripciones
Descripciones de STMicroelectronics STB180N55F3 suministradas por sus distribuidores.
Trans MOSFET N-CH 55V 120A 3-Pin(2+Tab) D2PAK T/R
N-channel 55V - 2.9mOhm - 120A - D2PAK/TO-220
MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation
MOSFET, N, D2-PAK; Current, Id cont:120A; Resistance, Rds on:0.0035R; Case style:D2-Pak; Current, Idm pulse:480A; Marking, SMD:180N55F3; Pins, No. of:3; Power dissipation:330W; Termination Type:SMD; Transistor polarity:N; Voltage, RoHS Compliant: Yes
Alias de fabricantes
STMicroelectronics tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. STMicroelectronics también podría ser conocido por los siguientes nombres:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Especificaciones técnicas
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance3.5 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.8 nF
Max Operating Temperature175 °C
Max Power Dissipation330 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape (CT)
Power Dissipation330 W
Rds On Max3.5 mΩ
Rise Time150 ns
Schedule B8541290080
Turn-Off Delay Time110 ns
Turn-On Delay Time25 ns
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para STMicroelectronics STB180N55F3.
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant