Renesas ISL89163FBEBZ

IC GATE DRVR LOW-SIDE 8SOIC / Low-Side Gate Driver IC Non-Inverting 8-SOIC-EP
$ 2.501
Obsolete

Precio y existencias

Documentos

Descargar fichas técnicas y documentación del fabricante para Renesas ISL89163FBEBZ.

IHS

Datasheet22 páginasHace 7 años
Datasheet15 páginasHace 15 años

Integrated Device Technology

Future Electronics

Intersil

TME

Modelos CAD

Información del modelo
Suministrado porRenesas
Fecha de lanzamientoAug 13, 2025
Conforme con IPCIPC-7351B
Revisión de la guía de estiloVersión 1.0 - Nov 1, 2024
Fuente de la ficha técnicaVersión 6.00 - Jul 9, 2019
Verificación

Historial de existencias

Tendencia de 3 meses:
+12.69%

Cadena de suministros

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8540000000
Introduction Date2017-10-24
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2025-12-06
LTD Date2026-06-06
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 months ago)

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ISL89165 Series Dual Ch 6 A 2 Ohm 0 to 16 Vout Power MOSFET Driver - SOIC-8
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Descripciones

Descripciones de Renesas ISL89163FBEBZ suministradas por sus distribuidores.

IC GATE DRVR LOW-SIDE 8SOIC / Low-Side Gate Driver IC Non-Inverting 8-SOIC-EP
ISL89163 Series Dual Ch 6 A 2 Ohm 4.5 to 16 Vout Power MOSFET Driver - SOIC-8
GULL WING RoHS Compliant Active Matte Tin (Sn) - annealed IC Gate Driver 3.9mm 16V 33.3W 6A
High Speed, Dual Channel, 6A, Power MOSFET Driver with Enable Inputs
The ISL89163, ISL89164, and ISL89165 are high-speed, 6A, dual channel MOSFET drivers with enable inputs. Precision thresholds on all logic inputs allow the use of external RC circuits to generate accurate and stable time delays on both the main channel inputs, INA and INB, and the enable inputs, ENA and ENB. The precision delays capable of these precise logic thresholds makes these parts very useful for dead-time control and synchronous rectifiers. Note that the enable and input logic inputs can be interchanged for alternate logic implementations. Three input logic thresholds are available: 3. 3V (CMOS), 5. 0V (CMOS or TTL compatible), and CMOS thresholds that are proportional to VDD. At high switching frequencies, these MOSFET drivers use very little internal bias currents. Separate, non-overlapping drive circuits are used to drive each CMOS output FET to prevent shoot-through currents in the output stage. The start-up sequence is designed to prevent unexpected glitches when VDD is being turned on or turned off. When VDD < ~1V, an internal 10kΩ resistor between the output and ground helps to keep the output voltage low. When ~1V < VDD < UV, both outputs are driven low with very low resistance and the logic inputs are ignored. This insures that the driven FETs are off. When VDD > UVLO, and after a short delay, the outputs now respond to the logic inputs.

Alias de fabricantes

Renesas tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Renesas también podría ser conocido por los siguientes nombres:

  • Renesas Electronics
  • Renesas Electronics America Inc
  • Renesas Electronics America
  • RENESA
  • REN
  • RENES
  • RENESAS TECHNOLOGY CORP
  • RENESAS TECHNOLOGY
  • Renesas Electronics Corporation
  • RENESAS ELECTRONICS CORP
  • RENSAS
  • RENASAS
  • Renesas / Intersil
  • RNS
  • RENESAS-PB
  • RENESASTEC
  • RENESES
  • Renesas Technology America
  • Renesas Design Germany GmbH
  • Renesas / IDT
  • RENESASE
  • RENESAS TECHNOLOGY HONG KONG
  • Renesas Electronics Operations Services Limited
  • RENEASAS
  • RENESAS/M