Renesas ICL7612DCPAZ

ICL7612 Series 16 V 1.4 MHz 1.6 V/µs CMOS Operational Amplifier - PDIP-8

Operational Amplifier, 1 Func, 20000uV Offset-Max, CMOS, PDIP8

Lead Free 1999 OPERATIONAL AMPLIFIER CMOS OPERATIONAL AMPLIFIER Amplifier 96dB 1.6V/mus 70C 1.4MHz

1mA 1.6V/¦Ìs 100nV/rtHz 1.4MHz 40mA 1 1 16V 15mV 1pA General Purpose PDIP-8 4.95mm

IC, OP AMP, CMOS, 7612, DIP8; Op Amp Type:Low Power; No. of Amplifiers:1; Bandwidth:1.4MHz; Slew Rate:1.6Vµs; Supply Voltage Range:± 1V to ± 8V; Amplifier Case Style:DIP; No. of Pins:8; Operating Temperature Range:0°C to +70°C; SVHC:No SVHC (20-Jun-2011); Amplifier Type:CMOS; Base Number:7612; Gain Bandwidth:1.4MHz; IC Generic Number:7612; IC Temperature Range:Commercial; Input Offset Voltage Max:20mV; Logic Function Number:7612; Operating Temperature Max:70°C; Operating Temperature Min:0°C; Package / Case:DIP; Slew Rate:1.6V/µs; Supply Voltage + Nom:5V; Supply Voltage Max:8V; Supply Voltage Min:1V; Termination Type:Through Hole

The ICL761X series is a family of CMOS operational amplifiers. These devices provide the designer with high performance operation at low supply voltages and selectable quiescent currents, and are an ideal design tool when ultra low input current and low power dissipation are desired. The basic amplifier will operate at supply voltages ranging from ±1V to ±8V, and may be operated from a single Lithium cell. A unique quiescent current programming pin allows setting of standby current to 1mA, 100µA, or 10µA, with no external components. This results in power consumption as low as 20µW. The output swing ranges to within a few millivolts of the supply voltages. Of particular significance is the extremely low (1pA) input current, input noise current of 0. 01pA/√Hz, and 1012Ω input impedance. These features optimize performance in very high source impedance applications. The inputs are internally protected. Outputs are fully protected against short circuits to ground or to either supply. AC performance is excellent, with a slew rate of 1. 6V/µs, and unity gain bandwidth of 1MHz at IQ = 1mA. Because of the low power dissipation, junction temperature rise and drift are quite low. Applications utilizing these features may include stable instruments, extended life designs, or high density packages.