onsemi RFD16N05

Trans MOSFET N-CH 50V 16A 3-Pin (3+Tab) TO-251 Rail
Obsolete
Ficha técnica

Precio y existencias

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DistributorSKUMinPkg
FarnellRFD16N0501
4h
Component Stockers USARFD16N05115
>1wk
Worldway ElectronicsRFD16N0529.8647Tube
1d
AnlinkdaRFD16N0522.806
2d
KlychipRFD16N05Contacto1
>1wk

Fichas técnicas y documentos

Descargar fichas técnicas y documentación del fabricante para onsemi RFD16N05.

IHS

Datasheet8 páginasHace 22 años

Arrow Electronics

Farnell

Cadena de suministros

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-03-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-12-04
LTD Date2010-06-04

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Descripciones

Descripciones de onsemi RFD16N05 suministradas por sus distribuidores.

Trans MOSFET N-CH 50V 16A 3-Pin (3+Tab) TO-251 Rail
Verical
16A, 50V, 0.047 OHM, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
ComSIT Distribution GmbH
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:50V; Continuous Drain Current, Id:16A; On Resistance, Rds(on):0.047ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
Newark
MOSFET, N, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:50V; Current, Id Cont:16A; Resistance, Rds On:0.047ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:I-PAK; Termination Type:Through Hole; Operating Temperature Range:-55°C to +175°C; Alternate Case Style:TO-251; Current, Idm Pulse:20A; Lead Length:9.65mm; Lead Spacing:2.28mm; Power Dissipation:60W; Power, Pd:72W; SMD Marking:RFD16N05; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, t Off:16ns; Time, t On:30ns; Transistors, No. of:1; Voltage, Vds Max:50V
Farnell

Imágenes

Farnell
Rochester Electronics

Alias de fabricantes

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