onsemi NDT3055L
$ 0.439
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: -10.59%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
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0 piezas disponibles
Modelos CAD
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|---|---|---|---|
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 EE Concierge | SímboloFootprint | ||
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1995-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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MOSFET, P CH, W/DIO, 60V, 3A, SOT223; Transistor Polarity:P Channel; Continuous
Descripciones
Descripciones de onsemi NDT3055L suministradas por sus distribuidores.
N-Channel Logic Level Enahncement Mode Field Effect Transistor 60V, 4A, 100mΩ
MOSFET, N CHANNEL, 60V, 4A, SOT-223; TRA; Transistor Polarity:N Channel; Continuous Drain Current Id:4A;
Power MOSFET, N Channel, 60 V, 4 A, 0.1 ohm, SOT-223, Surface Mount
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 4 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 120 / Gate-Source Voltage V = 20 / Fall Time ns = 20 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 50 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.1
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -10.59%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)4 A
Current32 A
Current Rating3.5 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance345 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3 W
Min Breakdown Voltage60 V
Min Operating Temperature-65 °C
Nominal Vgs1.6 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation3 W
Rds On Max100 mΩ
Resistance100 mΩ
Rise Time7.5 ns
Schedule B8541290080
Threshold Voltage1.6 V
Turn-Off Delay Time20 ns
Turn-On Delay Time5 ns
Voltage40 V
Voltage Rating (DC)60 V
Dimensions
Height1.8 mm
Length6.5 mm
Width6.7 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento