onsemi NDT014
$ 0.434
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: -2.24%
Modelos CAD
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Cadena de suministros
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1995-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi NDT014 suministradas por sus distribuidores.
N-Channel Enhancement Mode Field Effect Transistor 60V, 2.7A, 0.2Ω
Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R
60V N-Fet 200 Mo Sot223 Rohs Compliant: Yes
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
60V 2.7A 180m´Î@10V1.6A 3W 3V@250uA 15pF@25V N Channel 155pF@25V 5nC@10V -65¡Í~+150¡Í@(Tj) SOT-223 MOSFETs ROHS
POWER FIELD-EFFECT TRANSISTOR, 2
MOSFETs N-Channel FET Enhancement Mode
MOSFET, N SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:3W; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Package / Case:SOT-223; Power Dissipation Pd:3W; Power Dissipation Pd:3W; Pulse Current Idm:10A; SMD Marking:014; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -2.24%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins3
Number of Terminals4
Weight188 mg
Technical
Continuous Drain Current (ID)2.7 A
Current Rating2.7 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance155 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3 W
Min Breakdown Voltage60 V
Min Operating Temperature-65 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.1 W
Rds On Max200 mΩ
Resistance200 mΩ
Rise Time64 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage3 V
Turn-Off Delay Time10 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)60 V
Dimensions
Height1.8 mm
Length6.7 mm
Width3.7 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento