onsemi NDS9952A
$ 0.422
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | NDS9952A | 100 | 5h | |||||||||
| Sensible Micro | NDS9952A | 888 | 7d | |||||||||
| Win Source | WS-NDS9952A | 2905 | 185 | 6h | ||||||||
| ICPartonline | NDS9952A | 16.504 | >1wk | |||||||||
| Worldway Electronics | NDS9952A | 26.621 | 7 | Tape & Reel | 5h |
Historial de existencias
Tendencia de 3 meses: -6.11%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi NDS9952A.
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de onsemi NDS9952A desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | Descargar |
La página web del socio se abrirá en una nueva pestaña al descargar sus modelos CAD
Al descargar modelos CAD de Octopart, usted acepta nuestros Términos y Condiciones y nuestra Política de Privacidad.
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-01-01
Lifecycle StatusObsolete (Last Updated: 1 week ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
Componentes relacionados
InfineonIRF7306PBF
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V
InfineonIRF7306TRPBF
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V
InfineonIRF7326D2TRPBF
2W(Ta) 20V 1V@ 250¦ÌA 25nC@ 10 V 1P 30V 100m¦¸@ 1.8A,10V 3.6A 440pF@25V SOIC-8 1.5mm
Descripciones
Descripciones de onsemi NDS9952A suministradas por sus distribuidores.
Trans MOSFET N/P-CH 30V 3.7A/2.9A 8-Pin SOIC N T/R
Dual N & P-Channel Enhancement Mode Field Effect Transistor 30V
Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.7A; On Resistance, Rds(on):80mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET N & P CH 30V 3.7/-2.9A 8SOIC; Transistor Type:MOSFET; Transistor Polarity:N/P ; Voltage, Vds Typ:30V; Current, Id Cont:3.7A; On State Resistance:80mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C
These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -6.11%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight230.4 mg
Technical
Continuous Drain Current (ID)3.7 A
Current Rating2.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationDual
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance320 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation900 mW
Rds On Max80 mΩ
Resistance80 MΩ
Rise Time21 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1.7 V
Turn-Off Delay Time21 ns
Dimensions
Height1.75 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi NDS9952A.
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento