onsemi NDS332P
$ 0.143
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +240%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1996-05-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.057ohm; 0.5W; -55+150 deg.C; SMD; SOT23; AEC-Q100
Descripciones
Descripciones de onsemi NDS332P suministradas por sus distribuidores.
Transistor MOSFET P Channel 20 Volt 1 Amp 3 Pin Supersot Tape and Reel
P-Channel Logic Level Enhancement Mode Field Effect Transistor -20V, -1A, 0.41Ω
Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.41ohm; Rds(on) Test Voltage Vgs: -2.7V; Threshold Voltage Vgs: -600mV; Power Dissipati
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -1 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 410 / Gate-Source Voltage V = 8 / Fall Time ns = 45 / Rise Time ns = 45 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +240%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1 A
Current Rating-1 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)-20 V
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Schedule B8541210080
Voltage Rating (DC)-20 V
Dimensions
Width3.05 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento