onsemi MMBZ12VALT1G
$ 0.055
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Precio y existencias
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Historial de existencias
Tendencia de 3 meses: -23.35%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
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0 piezas disponibles
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Component Search Engine | SímboloFootprint | 3D | Descargar |
 EE Concierge | SímboloFootprint | ||
 SnapEDA | SímboloFootprint | 3D | Descargar |
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Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.50
Introduction Date1999-12-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Componentes relacionados
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Uni-Directional 40 W 38 V Surface Mount Transient Voltage Suppressor -SOT-23-3
onsemiMMBZ27VALT1G
MMBZ Series 40 W 27 V Bi-Directional Surface Mount Zener TVS Diode - SOT-23-3
Descripciones
Descripciones de onsemi MMBZ12VALT1G suministradas por sus distribuidores.
Bi-Directional 40 W 17 V Surface Mount Transient Voltage Suppressor - SOT-23-3
17V 11.4V SOT-23-3 ESD and Surge Protection (TVS/ESD) ROHS
MMBZ12VALT1G, DUAL UNI-DIRECTIONAL TVS DIODE, 40W, 3-PIN SOT-23
Product Range:-; TVS Polarity:Unidirectional; Reverse Standoff Voltage:8.5V; Clamping Voltage Max:17V; Diode Case Style:SOT-23; No. of Pins:3Pins; Minimum Breakdown Voltage:11.4V; Maximum Breakdown Voltage:12.6V; Qualification:- RoHS Compliant: Yes
These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers printers business machines communication systems medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -23.35%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Breakdown Voltage12 V
Clamping Voltage17 V
CompositionZener
DirectionUnidirectional
Element ConfigurationCommon Anode
ESD ProtectionYes
Forward Voltage900 mV
Leakage Current200 nA
Max Breakdown Voltage12.6 V
Max Operating Temperature150 °C
Max Output Current2.35 A
Max Power Dissipation225 mW
Max Reverse Leakage Current200 nA
Max Surge Current2.35 A
Min Breakdown Voltage11.4 V
Min Operating Temperature-55 °C
Number of Bidirectional Channels1
Number of Channels2
Number of Elements2
Number of Unidirectional Channels2
Operating Supply Voltage8.5 V
PackagingTape and Reel
Peak Pulse Current2.35 A
Peak Pulse Power 40 W
Peak Reverse Current200 nA
PolarityUnidirectional
Power Dissipation40 W
Power Line ProtectionNo
Power Rating40 W
Reverse Breakdown Voltage11.4 V
Reverse Standoff Voltage8.5 V
Schedule B8536300000
TerminationSMD/SMT
Test Current1 mA
Voltage Rating (DC)12 V
Working Voltage8.5 V
Dimensions
Depth1.3 mm
Height1.01 mm
Length2.9 mm
Width1.4 mm
Fichas técnicas y documentos
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Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento