onsemi MMBT5550
$ 0.044
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | MMBT5550 | 9113 | 22h | |||||||||
| Flip Electronics | MMBT5550 | 40.000 | 1d | |||||||||
| element14 APAC | MMBT5550 | 0 | 5 | Cut Tape | 10h | |||||||
| Farnell | MMBT5550 | 0 | 5 | Cut Tape | 22h | |||||||
| Win Source | WS-MMBT5550 | 183.000 | 1280 | 23h |
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de onsemi MMBT5550 desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 SnapEDA | SímboloFootprint | Descargar | |
 Ultra Librarian | SímboloFootprint | Descargar |
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Cadena de suministros
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-01-06
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2018-06-22
LTD Date2018-12-22
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)
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Descripciones
Descripciones de onsemi MMBT5550 suministradas por sus distribuidores.
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 60 @ 10mA 5V 600mA 350mW 50MHz
Small Signal Bipolar Transistor, 0.6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Bipolar Transistors - BJT SOT23 NPN 0.6A 160V HighVolt
140V 225mW 60@10mA,5V 600mA NPN SOT-23 Bipolar Transistors - BJT ROHS
MMBT5550 Series 150 V CE Breakdown 0.6 A NPN General Purpose Amplifier - SOT-23
Trans GP BJT NPN 140V 0.6A 3-Pin SOT-23 T/R
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:140V; Power Dissipation, Pd:225mW; DC Collector Current:600mA; DC Current Gain Max (hfe):60; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes
TRANSISTOR,NPN,SMD,SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:150V; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:60; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:250mV; Current Ic Continuous a Max:50mA; Hfe Min:60; Package / Case:SOT-23; Power Dissipation Pd:225mW; Termination Type:SMD
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)160 V
Collector Emitter Breakdown Voltage140 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)140 V
Current Rating600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency50 MHz
Gain Bandwidth Product50 MHz
hFE Min20
Max Breakdown Voltage140 V
Max Collector Current600 mA
Max Frequency50 MHz
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Transition Frequency50 MHz
Voltage Rating (DC)140 V
Dimensions
Height930 µm
Length2.92 mm
Width1.3 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento