onsemi HGTP12N60C3D
$ 2.03
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-01-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Componentes relacionados
InfineonIRG4BC30FD1PBF
600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode
InfineonIRG4BC30KDPBF
Trans IGBT Chip N-CH 600V 28A 100000mW 3-Pin(3+Tab) TO-220AB Tube, TO220COPAK-3, RoHS
onsemiISL9V3040P3
Trans IGBT Chip N=-CH 390V 21A 150000mW Automotive 3-Pin(3+Tab) TO-220AB Tube
Descripciones
Descripciones de onsemi HGTP12N60C3D suministradas por sus distribuidores.
Trans IGBT Chip N=-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220AB Rail
HGTP12N60C3D Series 600 V 24 A Flange Mount UFS N-Channel IGBT-TO-220AB
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB
600V,24A,UFS SERIES NCH IGBT,W/ANTI-PARALLEL HYPERFAST DIODE
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49182.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.2 V
Collector Emitter Voltage (VCEO)600 V
Current Rating24 A
Element ConfigurationSingle
Fall Time275 ns
Max Collector Current24 A
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Operating Temperature-40 °C
Number of Elements1
PolarityNPN
Power Dissipation104 W
Reverse Recovery Time40 ns
Schedule B8541290080
Turn-Off Delay Time270 ns
Turn-On Delay Time28 µs
Voltage Rating (DC)600 V
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento