onsemi HGTG30N60A4
$ 2.68
EOL
Precio y existencias
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Historial de existencias
Tendencia de 3 meses: -67.86%
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Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-03-07
Lifecycle StatusEOL (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
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Descripciones
Descripciones de onsemi HGTG30N60A4 suministradas por sus distribuidores.
Transistor IGBT Chip Negative Channel 600 Volt 75A 3-Pin(3+Tab) TO-247 Rail
HGTG30N60A4 Series 600 V 75 A Flange Mount SMPS N-Channel IGBT-TO-247
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247
IGBT Transistors 600V N-Channel IGBT SMPS Series
Ptpigbt To247 60A 600V Rohs Compliant: Yes
IC REG LINEAR 3.8V 50MA SOT23-5
The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:75A; Collector Emitter Voltage Vces:2.6V; Power Dissipation Pd:463W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:75A; Current Temperature:25°C; Device Marking:HGTG30N60A4; Fall Time tf:38ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Pin Format:GCE; Power Dissipation Max:463W; Power Dissipation Pd:463W; Power Dissipation Pd:463W; Power Dissipation Ptot Max:463W; Pulsed Current Icm:240A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -67.86%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.8 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current75 A
Current Rating75 A
Element ConfigurationSingle
Fall Time70 ns
Max Collector Current75 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation463 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation463 W
Rise Time12 ns
Schedule B8541290080
Turn-Off Delay Time150 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)600 V
Dimensions
Height24.75 mm
Length15.87 mm
Width4.82 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento