onsemi FQT4N25TF
$ 0.425
EOL
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Cadena de suministros
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-06-04
Lifecycle StatusEOL (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
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IRFL210TRPBF N-CHANNEL MOSFET TRANSISTOR, 0.96 A, 200 V, 3 + TAB-PIN SOT-223
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MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2 W
Descripciones
Descripciones de onsemi FQT4N25TF suministradas por sus distribuidores.
Power MOSFET, N-Channel, QFET®, 250 V, 0.83 A, 1.75 Ω, SOT-223
Trans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 250V 0.83A SOT-223
N-Channel 250 V 1.75 Ohm Surface Mount Mosfet - SOT-223
MOSFET, N-CH, 250V, 0.83A, SOT-223-3; Transistor Polarity:N Channel; Continuous Drain Current Id:830mA; Source Voltage Vds:250V; On Resistance
MOSFET, N-CH, 250V, 0.83A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 830mA; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 1.38ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Especificaciones técnicas
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins3
Number of Terminals4
Weight188 mg
Technical
Continuous Drain Current (ID)830 mA
Current Rating830 mA
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance1.75 Ω
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance200 pF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max1.75 Ω
Resistance1.75 Ω
Rise Time45 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time6.4 ns
Turn-On Delay Time6.8 ns
Voltage Rating (DC)250 V
Dimensions
Height1.7 mm
Length6.7 mm
Width3.7 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento