onsemi FQPF65N06
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Modelos CAD
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Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-07-07
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
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Descripciones
Descripciones de onsemi FQPF65N06 suministradas por sus distribuidores.
Power MOSFET, N-Channel, QFET®, 60 V, 40 A, 16 mΩ, TO-220F
Trans MOSFET N-CH 60V 40A 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 40A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
POWER FIELD-EFFECT TRANSISTOR, 4
LOGIC, POS NOR, SINGLE, 2 IP, SOT353
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:60V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:56W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Package / Case:TO-220F; Power Dissipation Pd:56W; Power Dissipation Pd:56W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Especificaciones técnicas
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)40 A
Current Rating40 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time105 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.41 nF
Max Operating Temperature175 °C
Max Power Dissipation56 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation56 W
Rds On Max16 mΩ
Rise Time160 ns
Threshold Voltage4 V
Turn-Off Delay Time90 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)60 V
Dimensions
Height9.19 mm
Length10.16 mm
Width4.7 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento