onsemi FQPF3N80C
$ 0.868
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +1.47%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Fichas técnicas y documentos
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Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | Descargar |
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Price @ 1000
$ 0.868
$ 0.777
Stock
796,277
36,645
Authorized Distributors
6
2
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
800 V
800 V
Continuous Drain Current (ID)
3 A
3 A
Threshold Voltage
5 V
-
Rds On Max
4.8 Ω
4.8 Ω
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
39 W
39 W
Input Capacitance
705 pF
705 pF
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-05-21
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi FQPF3N80C suministradas por sus distribuidores.
Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220F
In a Pack of 5, N-Channel MOSFET, 3 A, 800 V, 3-Pin TO-220F ON Semiconductor FQPF3N80C
800V 3A 39W 4.8´Î@10V1.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):4.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:39W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:39W; Power Dissipation Pd:39W; Pulse Current Idm:12A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +1.47%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)3 A
Current Rating3 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance4.8 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance705 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation39 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation39 W
Rds On Max4.8 Ω
Rise Time43.5 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time22.5 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)800 V
Dimensions
Height19.5 mm
Length10.16 mm
Width4.7 mm
Fichas técnicas y documentos
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Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento