onsemi FQP34N20
$ 4.541
EOL
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FQP34N20 | 1843 | 143 | 4h | ||||||||
| Flip Electronics | FQP34N20 | 25.843 | >1wk | |||||||||
| Farnell | FQP34N20 | 0 | 1K | 1h | ||||||||
| Microchip USA | FQP34N20 | 186 | 600 | Tube | 18h | |||||||
| Win Source | WS-FQP34N20 | 39.000 | 22 | 2h |
Historial de existencias
Tendencia de 3 meses: -0.60%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
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Modelos CAD
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Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-09-23
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
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Descripciones
Descripciones de onsemi FQP34N20 suministradas por sus distribuidores.
Power MOSFET, N-Channel, QFET®, 200 V, 31 A, 75 mΩ, TO-220
Single N-Channel 200 V 0.075 Ohm 78 nC 180 W DMOS Flange Mount Mosfet - TO-220-3
Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Rail
200 V, QFET N-CHANNEL MOSFET Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET,N CH,200V,31A,TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:180W; Operating Temperature Range:-55°C to +105°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Power Dissipation Pd:180W; Voltage Vgs Max:30V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -0.60%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)31 A
Current Rating31 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time115 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.1 nF
Max Operating Temperature150 °C
Max Power Dissipation180 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Elements1
Power Dissipation180 W
Rds On Max75 mΩ
Rise Time280 ns
Threshold Voltage5 V
Turn-Off Delay Time125 ns
Turn-On Delay Time40 ns
Voltage Rating (DC)200 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento