onsemi FQP2N80

Trans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) TO-220AB Rail
$ 0.583
Obsolete

Precio y existencias

Fichas técnicas y documentos

Descargar fichas técnicas y documentación del fabricante para onsemi FQP2N80.

IHS

Datasheet8 páginasHace 12 años
Datasheet0 páginasHace 0 años

onsemi

Fairchild Semiconductor

iiiC

Historial de existencias

Tendencia de 3 meses:
+0.00%

Cadena de suministros

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-11-10
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

Componentes relacionados

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Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220
onsemiFQP2N90
Power MOSFET, N-Channel, QFET®, 900 V, 2.2 A, 7.2 Ω, TO-220
onsemiFQP3N60C
Power MOSFET, N-Channel, QFET®, 600 V, 3 A, 3.4 Ω, TO-220
Single N-Channel 800 V 6.5 Ohms Flange Mount Power Mosfet - TO-220-3
Single N-Channel 1000 V 5 Ohms Flange Mount Power Mosfet - TO-220-3
Single N-Channel 800 V 6.5 Ohms Flange Mount Power Mosfet - TO-220-3

Descripciones

Descripciones de onsemi FQP2N80 suministradas por sus distribuidores.

Trans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) TO-220AB Rail
Transistor, mosfet, n-Channel,800V V(Br)Dss,2.4A I(D),to-220 Rohs Compliant: Yes |Onsemi FQP2N80
N-Channel QFET® MOSFET 800V, 2.4A, 6.3Ω
800 V, 2.4 A, 6.3 OHM N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.4A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 6.3ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 85
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Alias de fabricantes

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