onsemi FQP27P06
$ 0.917
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: -1.44%
Modelos CAD
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-10-19
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Componentes relacionados
STMicroelectronicsSTP20NF06L
N-channel 60 V, 0.06 Ohm typ., 20 A STripFET(TM) II Power MOSFET in TO-220 package
Descripciones
Descripciones de onsemi FQP27P06 suministradas por sus distribuidores.
Power MOSFET, P-Channel, QFET®, -60 V, -27 A, 70 mΩ, TO-220
Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:60V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Alternate Case Style:SOT-78B; Current Id Max:-27A; Current Temperature:25°C; Device Marking:FQP27P06; External Depth:29.03mm; External Length / Height:4.5mm; External Width:9.9mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:70mohm; Package / Case:TO-220; Power Dissipation Pd:120W; Power Dissipation Pd:120W; Pulse Current Idm:108A; Termination Type:Through Hole; Voltage Vds Typ:-60V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -1.44%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)27 A
Current Rating-27 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance70 mΩ
Dual Supply Voltage-60 V
Element ConfigurationSingle
Fall Time90 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.4 nF
Max Operating Temperature175 °C
Max Power Dissipation120 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Elements1
Power Dissipation120 W
Rds On Max70 mΩ
Resistance70 mΩ
Rise Time185 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time30 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)-60 V
Dimensions
Height6.35 mm
Length6.35 mm
Width9.9 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento