onsemi FQP19N20
$ 0.89
Obsolete
Precio y existencias
Distribuidores autorizados
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Distribuidor
SKU
Mín.
Pkg
Precios por volumen
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Fichas técnicas y documentos
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Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint | ||
 Ultra Librarian | SímboloFootprint | Descargar |
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Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)
Componentes relacionados
onsemiFQP10N20CTSTU
Power Field-Effect Transistor, 9.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Descripciones
Descripciones de onsemi FQP19N20 suministradas por sus distribuidores.
Power MOSFET, N-Channel, QFET®, 200 V, 19.4 A, 150 mΩ, TO-220
N-Channel 200 V 0.15 Ohm Flange Mount Mosfet - TO-220-3
Trans MOSFET N-CH 200V 19.4A 3-Pin(3+Tab) TO-220AB Rail
Avnet Japan
Power Field-Effect Transistor, 19.4A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:19.4A; Drain Source Voltage Vds:200V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:250mJ; Capacitance Ciss Typ:1220pF; Current Id Max:19.4A; Current Temperature:25°C; Device Marking:FQP19N20; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:120mohm; Package / Case:TO-220; Pin Configuration:a; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Power Dissipation Ptot Max:140W; Pulse Current Idm:78A; Reverse Recovery Time trr Typ:140ns; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)19.4 A
Current Rating19.4 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance150 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time80 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.6 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation140 W
Rds On Max150 mΩ
Resistance150 mΩ
Reverse Recovery Time140 ns
Rise Time190 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5 V
Turn-Off Delay Time55 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)200 V
Dimensions
Height20.4 mm
Lead Pitch2.54 mm
Length10.2 mm
Width4.7 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FQP19N20.
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento