onsemi FQP12N60C
$ 1.316
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FQP12N60C | 3340 | 213 | |||||||||
| Avnet | FQP12N60C | 869 | 1 | 2d | ||||||||
| Rochester Electronics | FQP12N60C | 3340 | 44m | |||||||||
| Flip Electronics | FQP12N60C | 869 | 6d | |||||||||
| Win Source | WS-FQP12N60C | 70 | 35 | 2h |
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Fichas técnicas y documentos
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Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Ultra Librarian | SímboloFootprint | Descargar |
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Componentes alternativos
Este componente
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Price @ 1000
$ 1.316
$ 1.485
$ 1.485
Stock
161,809
198,072
198,072
Authorized Distributors
4
2
2
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220
TO-220
Drain to Source Voltage (Vdss)
600 V
600 V
600 V
Continuous Drain Current (ID)
12 A
10.5 A
10.5 A
Threshold Voltage
4 V
-
-
Rds On Max
650 mΩ
700 mΩ
700 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
30 V
Power Dissipation
225 W
180 W
180 W
Input Capacitance
2.29 nF
1.9 nF
1.9 nF
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-03-05
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Descripciones
Descripciones de onsemi FQP12N60C suministradas por sus distribuidores.
Power MOSFET, N-Channel, QFET®, 600 V, 12 A, 650 mΩ, TO-220
FQP12N60C Series 600 V 0.65 Ohm Through Hole N-Channel Mosfet - TO-220
Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):530mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:225W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:650mohm; Package / Case:TO-220; Power Dissipation Pd:225W; Power Dissipation Pd:225W; Pulse Current Idm:48A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)12 A
Current Rating12 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance650 mΩ
Drain to Source Voltage (Vdss)600 V
Dual Supply Voltage600 V
Element ConfigurationSingle
Fall Time90 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.29 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation225 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
Power Dissipation225 W
Rds On Max650 mΩ
Resistance650 mΩ
Rise Time85 ns
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time140 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)600 V
Dimensions
Height20.4 mm
Length10.1 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FQP12N60C.
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento