onsemi FQP11P06
$ 0.439
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FQP11P06 | 1000 | 1471 | 1d | ||||||||
| Verical | FQP11P06 | 3442 | 709 | |||||||||
| Rochester Electronics | FQP11P06 | 117.376 | 4h | |||||||||
| Flip Electronics | FQP11P06 | 1000 | 23h | |||||||||
| Win Source | WS-FQP11P06 | 4000 | 60 | 5h |
Historial de existencias
Tendencia de 3 meses: -0.79%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de onsemi FQP11P06 desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Component Search Engine | SímboloFootprint | 3D | Descargar |
 SnapEDA | Footprint | 3D | Descargar |
 Ultra Librarian | SímboloFootprint | Descargar |
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Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-09-14
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
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MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.175Ohm;ID -12A;TO-220AB;PD 45W;VGS +/-20V
Descripciones
Descripciones de onsemi FQP11P06 suministradas por sus distribuidores.
P-Channel Power MOSFET, QFET®, -60 V, -11.4 A, 175 mΩ, TO-220
Trans MOSFET P-CH 60V 11.4A 3-Pin(3+Tab) TO-220AB Rail
Mosfet, P-Ch, 60V, 11.4A, 175Deg C, 53W Rohs Compliant: Yes |Onsemi FQP11P06
Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for lowvoltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -0.79%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)11.4 A
Current Rating-11.4 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance175 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance550 pF
Max Operating Temperature175 °C
Max Power Dissipation53 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation53 W
Rds On Max175 mΩ
Rise Time40 ns
Turn-Off Delay Time15 ns
Turn-On Delay Time6.5 ns
Voltage Rating (DC)-60 V
Dimensions
Height15.38 mm
Length10.1 mm
Width4.7 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento