onsemi FQI4N80TU
$ 0.876
Obsolete
Historial de existencias
Tendencia de 3 meses: -4.32%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
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Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-11-10
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
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N-channel 950 V, 3 Ohm, 4 A Zener-protected SuperMESH3(TM) Power MOSFET in I2PAKFP package
Descripciones
Descripciones de onsemi FQI4N80TU suministradas por sus distribuidores.
N-Channel Power MOSFET, QFET®, 800 V, 3.9 A, 3.6 Ω, I2PAK
Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N, TO-262; Transistor type:Enhancement; Voltage, Vds typ:800V; Current, Id cont:3.9A; Resistance, Rds on:3.6ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-262; Current, Idm pulse:15.6A; Pins, No. of:3; Power dissipation:3.13W; Termination Type:Through Hole; Transistor polarity:N; Voltage, Vds max:800V; Voltage, Vgs th max:5V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -4.32%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.084 g
Technical
Continuous Drain Current (ID)3.9 A
Current Rating3.9 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance3.6 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance880 pF
Max Operating Temperature150 °C
Max Power Dissipation130 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rds On Max3.6 Ω
Resistance3.6 Ω
Rise Time45 ns
Turn-Off Delay Time35 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)800 V
Dimensions
Height9.2 mm
Length9.9 mm
Width4.5 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento