onsemi FQD5N60CTM
$ 0.511
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FQD5N60CTM | 20 | 1250 | 8h | ||||||||
| Arrow Electronics | FQD5N60CTM | 355 | 1 | |||||||||
| Verical | FQD5N60CTM | 355 | 12 | |||||||||
| DigiKey | FQD5N60CTMCT-ND | 10.008 | 1 | Cut Tape | ||||||||
| Flip Electronics | FQD5N60CTM | 20 | 6d |
Historial de existencias
Tendencia de 3 meses: -20.62%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
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 EE Concierge | SímboloFootprint |
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Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-10-30
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi FQD5N60CTM suministradas por sus distribuidores.
N-Channel Power MOSFET, QFET®, 600 V, 2.8 A, 2.5 Ω, DPAK
Single N-Channel 600 V 2.5 Ohm 19 nC 2.5 W DMOS SMT Mosfet - TO-252-3
600 V, 2.8 A, 2.5 OHM N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -20.62%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)2.8 A
Current Rating5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance2.5 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance670 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation49 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max2.5 Ω
Resistance2.5 Ω
Rise Time42 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time38 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)600 V
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento