Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| element14 APAC | FQD4P25TM-WS | 0 | 5 | Cut Tape | 16h | |||||||
| Farnell | FQD4P25TM-WS | 0 | 5 | Cut Tape | 1d | |||||||
| Win Source | WS-FQD4P25TM_WS | 40.000 | 5 | 4h | ||||||||
| Worldway Electronics | FQD4P25TM-WS | 18.228 | 7 | Tape & Reel | 3h | |||||||
| Aztech | FQD4P25TM-WS | 9486 | 1d |
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Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-09-14
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Componentes relacionados
Descripciones
Descripciones de onsemi FQD4P25TM-WS suministradas por sus distribuidores.
P-Channel MOSFET, QFET®, -250V, -3.1A, 2.1Ω
P-Ch/250V/3.1A/2.1Ohm - To252 (D-Pak), Molded, 3 Lead,Option Aa&Ab
MOSFET, P-CH, -250V, -3.1A, TO-252; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.1A; Drain Source Voltage Vds: -250V; On Resistance Rds(on): 1.63ohm; Rds(on) Test Volt; Available until stocks are exhausted
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Especificaciones técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)3.1 A
Drain to Source Breakdown Voltage-250 V
Drain to Source Resistance2.1 Ω
Drain to Source Voltage (Vdss)-250 V
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance420 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max2.1 Ω
Resistance2.1 Ω
Rise Time60 ns
Schedule B8541290080
Turn-Off Delay Time14 ns
Turn-On Delay Time9.5 ns
Dimensions
Height2.39 mm
Fichas técnicas y documentos
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Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento