onsemi FQD3P50TM
$ 0.574
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: -17.64%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Fichas técnicas y documentos
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Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-10-18
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Componentes relacionados
Descripciones
Descripciones de onsemi FQD3P50TM suministradas por sus distribuidores.
P-Channel Power MOSFET, QFET®, -500 V, -2.1 A, 4.9 Ω, DPAK
TRANSISTOR,MOSFET,P-CHANNEL,500V V(BR)DSS,2.1A I(D),TO-252AA
In a Pack of 10, FQD3P50TM P-Channel MOSFET, 1.33 A, 500 V QFET, 3-Pin DPAK ON Semiconductor
Trans MOSFET P-CH 500V 2.1A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 500V 2.1A DPAK
Power MOSFET, P Channel, 500 V, 2.1 A, 3.9 ohm, TO-252 (DPAK), Surface Mount
Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -2.1 / Drain-Source Voltage (Vds) V = -500 / ON Resistance (Rds(on)) Ohm = 4.9 / Gate-Source Voltage V = 30 / Fall Time ns = 45 / Rise Time ns = 56 / Turn-OFF Delay Time ns = 35 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 50
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -17.64%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)2.1 A
Current18 A
Current Rating-2.1 A
Drain to Source Breakdown Voltage-500 V
Drain to Source Resistance4.9 Ω
Drain to Source Voltage (Vdss)-500 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance660 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max4.9 Ω
Resistance4.9 Ω
Rise Time56 ns
Schedule B8541290080
Threshold Voltage-5 V
Turn-Off Delay Time35 ns
Turn-On Delay Time12 ns
Voltage400 V
Voltage Rating (DC)-500 V
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm
Fichas técnicas y documentos
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Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento