onsemi FQB27P06TM
$ 0.93
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FQB27P06TM | 287 | 685 | 6d | ||||||||
| Newark | FQB27P06TM | 26 | 1 | Cut Tape | ||||||||
| Verical | FQB27P06TM | 2400 | 800 | |||||||||
| Arrow Electronics | FQB27P06TM | 800 | 800 | |||||||||
| Rochester Electronics | FQB27P06TM | 256 | 2d |
Historial de existencias
Tendencia de 3 meses: -6.57%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FQB27P06TM.
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de onsemi FQB27P06TM desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Component Search Engine | SímboloFootprint | 3D | Descargar |
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | Descargar |
La página web del socio se abrirá en una nueva pestaña al descargar sus modelos CAD
Al descargar modelos CAD de Octopart, usted acepta nuestros Términos y Condiciones y nuestra Política de Privacidad.
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-10-19
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Componentes relacionados
InfineonSPB18P06PGATMA1
MOSFET, P-CH, 60V, 18.7A, TO-263; Transistor Polarity:P Channel; Continuous Drai
InfineonIPB081N06L3GATMA1
In a Pack of 25, N-Channel MOSFET, 50 A, 60 V, 3-Pin D2PAK Infineon IPB081N06L3GATMA1
Descripciones
Descripciones de onsemi FQB27P06TM suministradas por sus distribuidores.
P-Channel Power MOSFET, QFET®, -60 V, -27 A, 70 mΩ, D2PAK
P-Channel 60 V 70 mOhm Surface Mount Mosfet - D2PAK-3
ON SEMICONDUCTOR - FQB27P06TM - MOSFET Transistor, P Channel, 27 A, -60 V, 0.055 ohm, -10 V, -4 V
Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):55mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:120W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:-27A; Package / Case:D2-PAK; Power Dissipation Pd:120W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -6.57%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)27 A
Current Rating-27 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)-60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time90 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.4 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation120 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation3.75 W
Rds On Max70 mΩ
Resistance70 MΩ
Rise Time185 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-4 V
Turn-Off Delay Time30 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)-60 V
Dimensions
Height5.08 mm
Length10.67 mm
Width9.65 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FQB27P06TM.
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento