onsemi FQA28N50
$ 2.396
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Distribuidor
SKU
Mín.
Pkg
Precios por volumen
Historial de existencias
Tendencia de 3 meses: -30.75%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Ultra Librarian | SímboloFootprint | Descargar |
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Cadena de suministros
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
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Tube Through Hole N-Channel Single Mosfet Transistor 36A Tc 36A 446W 80ns
Descripciones
Descripciones de onsemi FQA28N50 suministradas por sus distribuidores.
Power MOSFET, N-Channel, QFET®, 500 V, 28.4 A, 160 mΩ, TO-3P
310W(Tc) 30V 5V@ 250µA 140nC@ 10V 1individualNChannel 500V 160mΩ@ 14.2A,10V 28.4A 5.6nF@25V TO-3P Through hole mounting 23.8mm(height)
Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:28.4A; On Resistance Rds(On):0.16Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Product Range:-Rohs Compliant: Yes
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:28.4A; Drain Source Voltage Vds:500V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:28.4A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:113.6A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -30.75%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Continuous Drain Current (ID)28.4 A
Current Rating28.4 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance160 mΩ
Drain to Source Voltage (Vdss)500 V
Dual Supply Voltage500 V
Element ConfigurationSingle
Fall Time175 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance5.6 nF
Max Operating Temperature150 °C
Max Power Dissipation310 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Elements1
Power Dissipation310 W
Rds On Max160 mΩ
Rise Time290 ns
Turn-Off Delay Time250 ns
Turn-On Delay Time100 ns
Voltage Rating (DC)500 V
Dimensions
Height18.9 mm
Length15.8 mm
Width5 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento