onsemi FFP08S60SNTU

Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC
$ 1.026
Obsolete
Página del fabricanteFicha técnica

Precio y existencias

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DistributorSKUMinPkg
AvnetFFP08S60SNTU1000658
3d
Flip ElectronicsFFP08S60SNTU1000
5d
Component Stockers USAFFP08S60SNTU28.045
>1wk
Win SourceWS-FFP08S60SNTU760050
43m
Worldway ElectronicsFFP08S60SNTU24.5397Tube
23h

Fichas técnicas y documentos

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IHS

Datasheet5 páginasHace 21 años
Datasheet0 páginasHace 0 años

onsemi

Fairchild Semiconductor

Newark

Farnell

Historial de existencias

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Cadena de suministros

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.80
Introduction Date2008-05-12
Lifecycle StatusObsolete (Last Updated: 1 day ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)

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Descripciones

Descripciones de onsemi FFP08S60SNTU suministradas por sus distribuidores.

Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC
IHS
Diode Switching 600V 8A 2-Pin(2+Tab) TO-220 Rail
Verical
DIODE, RECTIFIER, 600V, 8A, TO-220; Diode Type:Ultrafast; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):8A; Forward Voltage VF Max:3.4V; Reverse Recovery Time trr Max:25ns; Forward Surge Current Ifsm Max:60A; Operating Temperature Range:-65°C to +150°C; Diode Case Style:TO-220; No. of Pins:2; MSL:MSL 1 - Unlimited
Farnell
The FFP08S60SN is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Fairchild Semiconductor

Imágenes

element14 APAC
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RS

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