onsemi FDV302P
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: -10.16%
Modelos CAD
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Modelos CAD
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Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-07-01
Lifecycle StatusObsolete (Last Updated: 1 day ago)
LTB Date2021-02-12
LTD Date2021-08-12
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)
Componentes relacionados
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Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.041ohm; 0.5W; -55+150 deg.C; SMD; SOT23; AEC-Q100
Descripciones
Descripciones de onsemi FDV302P suministradas por sus distribuidores.
Transistor MOSFET P-Channel 25V 125mA 350mW Surface Mount SOT-23
Trans MOSFET P-CH 25V 0.12A 3-Pin SOT-23 T/R
P-Channel 25 V 13 Ohm Surface Mount Digital FET - SOT-23-3
MOSFET Operating temperature: -55...+150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 350 mW
This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one P-channel FET can replace several digital transistors with different bias resistors such as the DTCx and DCDx series.
MOSFET, P, DIGITAL, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:120mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):13ohm; Rds(on) Test Voltage Vgs:2.7V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:120mA; Current Temperature:25°C; ESD HBM:6kV; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Pd:350mW; Pulse Current Idm:500mA; SMD Marking:302P; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:-25V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -10.16%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)120 mA
Current Rating-120 mA
Drain to Source Breakdown Voltage-25 V
Drain to Source Resistance10 Ω
Drain to Source Voltage (Vdss)-25 V
Dual Supply Voltage-25 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)-8 V
Input Capacitance11 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs-1 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation350 mW
Rds On Max10 Ω
Resistance13 Ω
Rise Time8 ns
Schedule B8541210080
Threshold Voltage-1 V
Turn-Off Delay Time9 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)-25 V
Dimensions
Height1.11 mm
Length2.92 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento