onsemi FDS6875
EOL
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: -100%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
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Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-10
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Componentes relacionados
InfineonIRF7311TRPBF
MOSFET, Power;Dual N-Ch;VDSS 20V;RDS(ON) 0.023Ohm;ID 6.6A;SO-8;PD 2W;VGS +/-12V
Descripciones
Descripciones de onsemi FDS6875 suministradas por sus distribuidores.
Dual P-Channel PowerTrench™ MOSFET, 2.5V Specified, -20V, -6A, 30mΩ
Transistor MOSFET Array Dual P-CH 20V 6A 8-Pin SOIC T/R
Avnet Japan
Dual P-Channel 20 V 30 mOhm PowerTrench Mosfet - SOIC-8
2W 8V 1.5V@ 250¦ÌA 31nC@ 5V 2P 20V 30m¦¸@ 6A,4.5V 6A 2.25nF@10V SOIC-8 4.9mm*3.9mm*1.75mm
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.
MOSFET, DUAL, PP, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-800mV; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; SMD Marking:FDS6875; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-800mV; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -100%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight187 mg
Technical
Continuous Drain Current (ID)6 A
Current Rating-6 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationDual
Fall Time35 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance2.25 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation2 W
Rds On Max30 mΩ
Resistance30 mΩ
Rise Time15 ns
Schedule B8541290080
Threshold Voltage-800 mV
Turn-Off Delay Time98 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento