onsemi FDP040N06
$ 1.62
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
0 models available
Componentes alternativos
0 piezas disponibles
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-08-12
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2012-08-27
LTD Date2013-02-27
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Descripciones
Descripciones de onsemi FDP040N06 suministradas por sus distribuidores.
Trans MOSFET N-CH 60V 168A 3-Pin(3+Tab) TO-220AB Rail
Power Field-Effect Transistor, 120A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
231W(Tc) 4.5V@ 250µA 133nC@ 10V 1individualNChannel 60V 4mΩ@ 75A,10V 8.235pF@25V TO-220-3 Through hole mounting
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
0 models available
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time24 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.235 nF
Max Operating Temperature175 °C
Max Power Dissipation231 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation231 W
Rds On Max4 mΩ
Rise Time40 ns
Turn-Off Delay Time55 ns