onsemi FDN361BN
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | FDN361BN | 0 | 5 | Cut Tape | 3h | |||||||
| Component Stockers USA | FDN361BN | 455 | 1d | |||||||||
| Weyland Electronics Group Pte. Ltd. | FDN361BN | 9600 | 1 | Tape & Reel | 20h | |||||||
| Win Source | WS-FDN361BN | 141.000 | 130 | 18h | ||||||||
| Microchip USA | FDN361BN | 222 | 100 | Tray | 9h |
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FDN361BN.
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de onsemi FDN361BN desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Component Search Engine | SímboloFootprint | 3D | Descargar |
 EE Concierge | SímboloFootprint | ||
 SnapEDA | SímboloFootprint | 3D | Descargar |
La página web del socio se abrirá en una nueva pestaña al descargar sus modelos CAD
Al descargar modelos CAD de Octopart, usted acepta nuestros Términos y Condiciones y nuestra Política de Privacidad.
Cadena de suministros
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2005-11-04
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2022-03-31
LTD Date2023-03-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
Componentes relacionados
Diodes Inc.ZXMP3A13FTA
Power MOSFET, Low Voltage, P Channel, 30 V, 1.6 A, 0.21 ohm, SOT-23, Surface Mount
InfineonBSS306NH6327XTSA1
Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.041ohm; 0.5W; -55+150 deg.C; SMD; SOT23
Diodes Inc.ZXMN3A01FTA
ZXMN3A01 Series 30 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3
Descripciones
Descripciones de onsemi FDN361BN suministradas por sus distribuidores.
N-Channel, PowerTrench® MOSFET, Logic Level, 30V, 1.4A, 110mΩ
Trans MOSFET N-CH 30V 1.4A 3-Pin SOT-23 T/R / MOSFET N-CH 30V 1.4A SSOT3
MOSFET, N CH, 30V, 1.4A, SOT-23-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.092ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V;
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Especificaciones técnicas
Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)1.4 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance193 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation460 mW
Rds On Max110 mΩ
Rise Time8 ns
Schedule B8541210080
Threshold Voltage2.1 V
Turn-Off Delay Time16 ns
Turn-On Delay Time3 ns
Dimensions
Height1.12 mm
Length1.4 mm
Width2.92 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FDN361BN.
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento