onsemi FDN352AP
$ 0.176
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: -3.42%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Fichas técnicas y documentos
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Modelos CAD
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Cadena de suministros
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2005-04-18
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi FDN352AP suministradas por sus distribuidores.
P-Channel PowerTrench® MOSFET -30V, -1.3A, 180mΩ
FDN352AP Series 30 V 1.3 A 180 mOhm Single P-Ch. PowerTrench® MOSFET-SSOT-3
ON SEMICONDUCTOR - FDN352AP - MOSFET Transistor, P Channel, -1.3 A, -30 V, 0.18 ohm, -10 V, -2 V
Power MOSFET, P Channel, 30 V, 1.3 A, 0.18 ohm, SuperSOT, Surface Mount
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -1.3 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 300 / Gate-Source Voltage V = 25 / Fall Time ns = 2 / Rise Time ns = 28 / Turn-OFF Delay Time ns = 18 / Turn-ON Delay Time ns = 8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -3.42%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1.3 A
Current13 A
Current Rating-1.3 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance150 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-2 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max180 mΩ
Resistance180 MΩ
Rise Time15 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-2 V
Turn-Off Delay Time10 ns
Turn-On Delay Time4 ns
Voltage30 V
Voltage Rating (DC)-30 V
Dimensions
Height1.22 mm
Length2.92 mm
Width1.4 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FDN352AP.
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento