onsemi FDMS7658AS

N-Channel 30 V 28 A 1.9 mO Surface Mount PowerTrench SyncFET Mosfet - Power 56
$ 0.576
EOL

Precio y existencias

Fichas técnicas y documentos

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Future Electronics

onsemi

element14 APAC

Fairchild Semiconductor

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Cadena de suministros

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-09-16
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2023-03-30
LTD Date2023-09-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Descripciones

Descripciones de onsemi FDMS7658AS suministradas por sus distribuidores.

N-Channel 30 V 28 A 1.9 mO Surface Mount PowerTrench SyncFET Mosfet - Power 56
Power Field-Effect Transistor, 29A I(D), 30V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

Alias de fabricantes

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