onsemi FDMQ8205A

FDMQ Series 100 V 3 A 2.5 W N-Ch/P-Ch SMT High-Efficiency Bridge Rectifier - MLP

Small Signal Field-Effect Transistor, 1.7A I(D), 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

MOSFET, DUAL N & P -CH, 2.5W, MLP-4; Transistor Polarity: Dual N and P Channel; Continuous Drain Current Id: -; Drain Source Voltage Vds: -; On Resistance Rds(on): -; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Powe

FDMQ8205A is GreenBridgeTM2 series of quad MOSFETs for a bridge application so that the input will be insensitive to the polarity of a power source coupled to the device. Many known bridge rectifier circuits can be configured using typical diodes. The conventional diode bridge has relatively high power loss that is undesirable in many applications. Especially, Power over Ethernet (PoE) Power Device (PD) application requires high-efficiency bridges because it should be operated with the limited power delivered from Power Source Equipment (PSE) which is classified by IEEE802.3at. FDMQ8205A is configured with low rDS(on) dual P-ch MOSFETs and N-ch MOSFETs so that it can reduce the power loss caused by the voltage drop, compared to the conventional diode bridge. FDMQ8205A enables the application to maximize the available power and voltage and to eliminate the thermal design problems in PoE PD applications. FDMQ8205A GreenBridgeTM2 is compatible with IEEE802.3at PoE standard by not compromising detection and classification PoE standard by not compromising detection and classification