onsemi FDMJ1023PZ

MLP6 2X1.6, -20V, -2.9A, 112M Ohm, Dual, Pch Power Trench Mosfet
$ 0.358
Obsolete
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DistributorSKUMinPkg
VericalFDMJ1023PZ2462871
Rochester ElectronicsFDMJ1023PZ2462
1h
Component Stockers USAFDMJ1023PZ4358
>1wk
Worldway ElectronicsFDMJ1023PZ22.3957
1d
QUARKTWIN TECHNOLOGY LTD
2
FDMJ1023PZContacto
1d

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IHS

Datasheet7 páginasHace 18 años
Datasheet0 páginasHace 0 años

iiiC

Fairchild Semiconductor

Historial de existencias

Tendencia de 3 meses:
Restocked
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Cadena de suministros

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-09-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-09-14
LTD Date2012-03-14

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Descripciones

Descripciones de onsemi FDMJ1023PZ suministradas por sus distribuidores.

MLP6 2X1.6,-20V,-2.9A,112m ohm,DUAL, PCH POWER TRENCH MOSFET
Onlinecomponents.com
Trans MOSFET Array Dual P-CH 20V 2.9A 6-Pin SC-75 MicroFET T/R
Avnet
Small Signal Field-Effect Transistor, 0.0029A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
MOSFETs -20V Dual P-Channel PowerTrench
Mouser
Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):93mohm; Rds(on) Test Voltage, Vgs:-4.5V; Threshold Voltage, Vgs Typ:-700mV; Power Dissipation Pd:1.4W ;RoHS Compliant: Yes
Newark
This dual P-Channel MOSFET uses Fairchild's advanced low voltage PowerTrench® process. This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The SC-75 MicroFET package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Fairchild Semiconductor

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