onsemi FDC6321C
$ 0.248
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +160%
Modelos CAD
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Modelos CAD
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Cadena de suministros
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1997-06-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi FDC6321C suministradas por sus distribuidores.
Transistor MOSFET N P Channel 25 Volt 0.68 Amp-0.46 Amp 6-Pin SuperSOT Tape and Reel
Dual N/P Channel 25 V 0.33 O 0.7 W Surface Mount Digital Fet - SOT-23-6
Small Signal Field-Effect Transistor, 0.00068A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
These dual N & P Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this dual digital FET can replace several digital transistors with different bias resistors.
MOSFET, DUAL, NP, SUPERSOT-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:460mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:900mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:2.7A; Cont Current Id P Channel:1.6A; Current Id Max:680mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance N Channel Max:680mohm; On State Resistance P Channel Max:450mohm; Package / Case:SuperSOT-6; Power Dissipation Pd:900mW; Power Dissipation Pd:900mW; Pulse Current Idm:1.5A; SMD Marking:FDC6321C; Termination Type:SMD; Uni / Bi Directional Polarity:NP; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +160%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)680 µA
Current Rating680 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Element ConfigurationDual
Fall Time9 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance50 pF
Max Operating Temperature150 °C
Max Power Dissipation900 mW
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs800 mV
Number of Channels2
Number of Elements2
PackagingTape & Reel
Power Dissipation900 mW
Rds On Max450 mΩ
Resistance450 mΩ
Rise Time9 ns
Schedule B8541210080
Threshold Voltage800 mV
Turn-Off Delay Time55 ns
Turn-On Delay Time3 ns
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento