onsemi FDC6301N
$ 0.183
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: -100%
Modelos CAD
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Cadena de suministros
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-06-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descripciones
Descripciones de onsemi FDC6301N suministradas por sus distribuidores.
MOSFET 2N-CH 25V 0.22A SSOT6 / Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R
ON SEMICONDUCTOR - FDC6301N - Dual MOSFET, Dual N Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
DUAL N-CHANNEL , DIGITAL FET Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
900mW 8V 1.5V@ 250¦ÌA 0.7nC@ 4.5V 2individualNChannel 25V 4¦¸@ 400mA,4.5V 220mA 9.5pF@10V SOT-23-6£¬TSOT-23-6 SMD mount 2.95mm*1.5mm*1mm
MOSFET, DUAL N-CH, 25V, 0.22A, SUPERSOT; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 220mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 3.1ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -100%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)220 mA
Current Rating220 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance4 Ω
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Element ConfigurationDual
Fall Time4.5 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance9.5 pF
Max Operating Temperature150 °C
Max Power Dissipation900 mW
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs850 mV
Number of Elements2
PackagingCut Tape
Power Dissipation900 mW
Rds On Max4 Ω
Resistance4 Ω
Rise Time4.5 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage850 mV
Turn-Off Delay Time4 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)25 V
Dimensions
Height1 mm
Length3 mm
Width1.7 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento