onsemi FDB8880
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Cadena de suministros
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-02-28
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2018-09-30
LTD Date2019-03-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
Componentes relacionados
onsemiIRFW530ATM
Power Field-Effect Transistor, 14A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Descripciones
Descripciones de onsemi FDB8880 suministradas por sus distribuidores.
Trans MOSFET N-CH 30V 11A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 30V 54A TO-263AB
N-Channel PowerTrench® MOSFET, 30V, 54A, 11.6mΩ
N-Channel 30 V 54 A 11.6 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB
Power Field-Effect Transistor, 11A I(D), 30V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:54A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:55W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:55W; Power Dissipation Pd:55W; SMD Marking:FDB8880; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1.2V
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Especificaciones técnicas
Physical
Case/PackageTO-263
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)11 A
Current Rating54 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance14.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time51 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.24 nF
Max Operating Temperature175 °C
Max Power Dissipation55 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Elements1
PackagingCut Tape
Power Dissipation55 W
Rds On Max11.6 mΩ
Rise Time107 ns
Threshold Voltage2.5 V
Turn-Off Delay Time47 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)30 V
Dimensions
Height4.83 mm
Length10.67 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento