onsemi FCPF380N60
$ 1.84
EOL
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FCPF380N60 | 862 | 237 | |||||||||
| Rochester Electronics | FCPF380N60 | 63.450 | 16h | |||||||||
| DigiKey | FCPF380N60FS-ND | 78 | 1 | Tube | ||||||||
| Newark | FCPF380N60 | 0 | 1K | |||||||||
| Avnet | FCPF380N60 | 0 | 1K | 18h |
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de onsemi FCPF380N60 desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 SnapEDA | Footprint | 3D | Descargar |
La página web del socio se abrirá en una nueva pestaña al descargar sus modelos CAD
Al descargar modelos CAD de Octopart, usted acepta nuestros Términos y Condiciones y nuestra Política de Privacidad.
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-01-20
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2025-10-08
LTD Date2026-04-08
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
Componentes relacionados
VishaySIHF12N60E-E3
E-Series N-Channel 600 V 0.38 O 58 nC Flange Mount Power Mosfet - TO-220FP
VishaySIHF12N65E-GE3
E Series N Channel 650 V 380 mO 70 nC Flange Mount Power Mosfet - TO-220FP
InfineonIPA60R330P6XKSA1
N-Channel 600 V 7 A 330 mO 22 nC CoolMOS P6 Power Transistor - TO-220FP
VishaySIHF12N60E-GE3
33W(Tc) 30V 4V@ 250¦ÌA 58nC@ 10 V 1N 600V 380m¦¸@ 6A,10V 12A 937pF@100V TO-220 16.12mm
Descripciones
Descripciones de onsemi FCPF380N60 suministradas por sus distribuidores.
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 10.2 A, 380 mΩ, TO-220F
Trans MOSFET N-CH 600V 10.2A 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 10.2A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Chip Resistor - Surface Mount 220mOhm 2512 (6432 Metric) ±1% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES 0.22 OHM 1% 1W 2512
MOSFET, N-CH, 600V, 10.2A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:10.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:31W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)10.2 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.665 nF
Max Operating Temperature150 °C
Max Power Dissipation31 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation31 W
Rds On Max380 mΩ
Rise Time7 ns
Turn-Off Delay Time45 ns
Turn-On Delay Time14 ns
Dimensions
Height9.19 mm
Length10.36 mm
Width4.9 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento