onsemi FCH041N60F
$ 6.56
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | FCH041N60F | 1253 | 1 | |||||||||
| Onlinecomponents.com | FCH041N60F | 0 | 30 | Bulk | ||||||||
| Future Electronics | FCH041N60F | 0 | 450 | Tube | ||||||||
| Master Electronics | FCH041N60F | 0 | 30 | |||||||||
| Avnet | FCH041N60F | 0 | 450 | 7h |
Historial de existencias
Tendencia de 3 meses: +6.16%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de onsemi FCH041N60F desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Component Search Engine | SímboloFootprint | 3D | Descargar |
 EE Concierge | SímboloFootprint |
La página web del socio se abrirá en una nueva pestaña al descargar sus modelos CAD
Al descargar modelos CAD de Octopart, usted acepta nuestros Términos y Condiciones y nuestra Política de Privacidad.
Cadena de suministros
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Componentes relacionados
STMicroelectronicsSTWA88N65M5
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 long leads package
onsemiFCH041N65F-F155
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 76 A, 41 mΩ, TO-247
onsemiFCH041N65EF-F155
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 76 A, 71 mΩ, TO-247
VishaySIHG70N60EF-GE3
Mosfet N-Ch 600V 70A To-247 Ef Series Rohs Compliant: Yes |Vishay SIHG70N60EF-GE3
Descripciones
Descripciones de onsemi FCH041N60F suministradas por sus distribuidores.
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 600 V, 76 A, 41 mΩ, TO-247
Power Field-Effect Transistor, 76A I(D), 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
MOSFET, N-CH, 600V, 76A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 76A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +6.16%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-247-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Continuous Drain Current (ID)76 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance41 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time53 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance14.365 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation595 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation595 W
Rds On Max41 mΩ
Rise Time66 ns
Schedule B8541290080
Turn-Off Delay Time244 ns
Turn-On Delay Time63 ns
Dimensions
Height24.75 mm
Length15.87 mm
Width4.82 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento