onsemi FCA35N60
$ 3.413
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: -0.58%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de onsemi FCA35N60 desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Ultra Librarian | SímboloFootprint | Descargar |
La página web del socio se abrirá en una nueva pestaña al descargar sus modelos CAD
Al descargar modelos CAD de Octopart, usted acepta nuestros Términos y Condiciones y nuestra Política de Privacidad.
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-04-13
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2022-09-29
LTD Date2023-03-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
Componentes relacionados
STMicroelectronicsSTW34NM60N
N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in TO-247 package
STMicroelectronicsSTP34NM60N
N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in TO-220 package
STMicroelectronicsSTF34NM60N
N-channel 600 V, 0.092 Ohm, 29 A, MDmesh(TM) II Power MOSFET in TO-220FP
Descripciones
Descripciones de onsemi FCA35N60 suministradas por sus distribuidores.
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 35 A, 98 mΩ, TO-3P
Trans MOSFET N-CH 600V 35A 3-Pin(3+Tab) TO-3P(N) Rail
600V 35A 312.5W 98m´Î@10V17.5A 5V@250Ã×A N Channel TO-3PN MOSFETs ROHS
Power Field-Effect Transistor, 35A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
312.5W(Tc) 30V 5V@ 250¦ÌA 181nC@ 10 V 1N 600V 98m¦¸@ 17.5A,10V 35A 6.64nF@25V TO-3PN 16.2mm*5mm*20.1mm
MOSFET, N CH, 600V, 35A, TO-3PN; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.079ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PN; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:105A
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -0.58%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance98 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time73 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance6.64 nF
Max Operating Temperature150 °C
Max Power Dissipation312.5 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation312.5 W
Rds On Max98 mΩ
Rise Time120 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time105 ns
Turn-On Delay Time34 ns
Dimensions
Height20.1 mm
Length15.8 mm
Width5 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento