NXP Semiconductors BC846B
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Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1988-01-11
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2004-06-30
Descripciones
Descripciones de NXP Semiconductors BC846B suministradas por sus distribuidores.
65V 200mW 100mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
65 V, 100 MILLI AMP NPN GENERAL-PURPOSE TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 65V 0.1A 250mW Automotive 3-Pin TO-236AB
400mV@ 5mA,100mA NPN 250mW 6V 15nA 80V 65V 100mA SOT-23 1.1mm
TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SMD, 3 PIN, BIP General Purpose Small Signal
TRANSISTOR, NPN, SOT-23; Transistor type:Small Signal General Purpose; Voltage, Vceo:65V; Current, Ic continuous a max:100mA; hfe, min:200; ft, typ:300MHz; Case style:SOT-23; Current, Ic hFE:2mA; Current, Ic max:100mA; Device RoHS Compliant: Yes
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:290; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC846B; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:200; No. of Transistors:1; Noise Factor Max:10dB; Package / Case:SOT-23; Power Dissipation Pd:250mW; Power Dissipation Ptot Max:250mW; SMD Marking:1B; Termination Type:SMD; Voltage Vcbo:80V
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 65 / DC Current Gain (hFE) = 290 / Collector-Base Voltage (Vcbo) V = 80 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 400 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900 / Reflow Temperature Max. °C = 260
Alias de fabricantes
NXP Semiconductors tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. NXP Semiconductors también podría ser conocido por los siguientes nombres:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Especificaciones técnicas
Physical
Case/PackageSOT-23
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage65 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)65 V
Current100 mA
Emitter Base Voltage (VEBO)6 V
Gain Bandwidth Product100 MHz
hFE Min200
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation250 mW
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage65 V
Dimensions
Height1.1 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento