Nexperia PEMD12,115

50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ
$ 0.136
Production
Página del fabricanteFicha técnica

Precio y existencias

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DistributorSKUMinPkg
NewarkPEMD12,1155605Cut Tape
Verical
3
PEMD12,11540.0002206
Rochester Electronics
2
PEMD12,1154.633.890
23h
DigiKey
2
1727-2155-1-ND5501Cut Tape
TME
2
PEMD12.11501
12h

Fichas técnicas y documentos

Descargar fichas técnicas y documentación del fabricante para Nexperia PEMD12,115.

IHS

Datasheet0 páginasHace 0 años
Datasheet17 páginasHace 14 años

Nexperia

TME

Future Electronics

Farnell

Historial de existencias

Tendencia de 3 meses:
-0.27%
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Cadena de suministros

Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-10-09
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 3 years ago)

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Descripciones

Descripciones de Nexperia PEMD12,115 suministradas por sus distribuidores.

50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ
Nexperia
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-666 T/R
Verical
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
IHS
1 PCS NPN,1 PCS PNP - Pre-Biased(Dual) 300mW 100mA 50V SOT-666 Digital Transistors ROHS
Dasenic
100 mA 50 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
Component Stockers USA
Dig.Transistor NPN/PNP 47K Auto SOT-666
RS APAC
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1/R2:1 ;RoHS Compliant: Yes
Newark
TRANS NPN/PNP 50V 0.1A SOT666; Transistor Polarity:NPN / PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:80; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-666; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:150mV; Current Ic Continuous a Max:10mA; Hfe Min:80; Package / Case:SOT-666; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:General Purpose
element14 APAC

Imágenes

Nexperia
Future Electronics
TME
Rochester Electronics

Alias de fabricantes

Nexperia tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Nexperia también podría ser conocido por los siguientes nombres:

  • Nexperia USA Inc
  • NEXPER
  • Nexperia BV
  • NXP/NEXPERIA
  • Nexperia USA
  • NEXP
  • Nexperi
  • NEXPERIA / NXP
  • Nexperia Inc
  • Nexperia/NXP Semiconductors
  • NEXPERIA(Nexperia)
  • NEXPERIA/NXP SEMICONDUCTOR
  • Nexperia(Ahn Se)
  • Nexperia Semiconductors Taiwan Ltd
  • NEXPERIA/N
  • NEXPERIA/PHILIPS
  • NEXPERIA USA INC (UA)
  • NEX-NXP
  • NEXPERIA USA INC (VA)
  • NEXPERIA (FORMERLY NXP) (4001801)