Nexperia PBSS8110T,215

Bipolar junction transistor, NPN, 1 A, 100 V, SMD, SOT-23, PBSS8110T,215

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

100 V, 1 A NPN low VCEsat transistor

Trans GP BJT NPN 100V 1A 480mW Automotive 3-Pin SOT-23 T/R

NPN low VCEsat transistor VCEO=100V VEBO=5V IC=1A SOT23

1000 mA 100 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB

TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC Collector Current: 1A; DC Current Gain hFE: 150hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 120V; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 1A; Current Ic hFE: 1mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 80; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Ptot Max: 480mW; Voltage Vcbo: 120V