Nexperia BCX55

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-243, Plastic/Epoxy, 3 Pin

1000 mA 60 V NPN Si SMALL SIGNAL TRANSISTOR

TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:63; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:150mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:180MHz; Hfe Min:63; No. of Transistors:1; Package / Case:SOT-89; Power Dissipation Pd:500mW; Power Dissipation Ptot Max:500mW; SMD Marking:BE; Termination Type:SMD; Voltage Vcbo:60V

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 1 / Collector-Emitter Voltage (Vceo) V = 60 / DC Current Gain (hFE) = 63 / Collector-Base Voltage (Vcbo) V = 60 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 180 / Power Dissipation (Pd) W = 1.35 / Package Type = SOT-89 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500 / Reflow Temperature Max. °C = 260