Nexperia BC857B

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon

SOT-23(TO-236) Bipolar Transistors - BJT ROHS

Trans GP BJT PNP 45V 0.1A 3-Pin TO-236AB

Transistor; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:-45V; Continuous Collector Current, Ic:100mA; Collector Emitter Saturation Voltage, Vce(sat):-300mV; Power Dissipation, Pd:200mW ;RoHS Compliant: Yes

Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = -100 / Collector-Emitter Voltage (Vceo) V = -45 / DC Current Gain (hFE) = 220 / Collector-Base Voltage (Vcbo) V = -50 / Emitter-Base Voltage (Vebo) V = -5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = -300 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = -700 / Reflow Temperature Max. °C = 260

TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:220; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-300mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC857B; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:220; No. of Transistors:1; Noise Factor Max:10dB; Package / Case:SOT-23; Power Dissipation Pd:250mW; Power Dissipation Ptot Max:200mW; SMD Marking:3F; Termination Type:SMD; Voltage Vcbo:50V